发明名称 |
PHASE CHANGING ON-CHIP THERMAL HEAT SINK |
摘要 |
A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip. |
申请公布号 |
US2015054131(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414528343 |
申请日期 |
2014.10.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DAHLSTROM Mattias E. |
分类号 |
H01L23/373;H01L49/02 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor structure, comprising:
a substrate; a buried insulator layer on the substrate; a semiconductor layer on the buried insulator layer; an isolation region in the semiconductor layer; and a resistor on the isolation region, wherein the resistor is composed of a phase change material that is configured to be in a liquid phase during operation of the resistor. |
地址 |
Armonk NY US |