发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
Technique of improving a manufacturing yield of a semiconductor device including a non-volatile memory cell in a split-gate structure is provided. A select gate electrode of a CG shunt portion is formed so that a second height d2 from the main surface of the semiconductor substrate of the select gate electrode of the CG shunt portion positioned in the feeding region is lower than a first height d1 of the select gate electrode from the main surface of the semiconductor substrate in a memory cell forming region. |
申请公布号 |
US2015054045(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201414532914 |
申请日期 |
2014.11.04 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
Chakihara Hiraku;Ishii Yasushi |
分类号 |
H01L27/115;H01L29/423;H01L29/06;H01L29/49 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Kawasaki-shi JP |