| 发明名称 |
OXIDE TFT, PREPARATION METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE |
| 摘要 |
An Oxide TFT, a preparation method thereof, an array substrate and a display device are described. The method includes forming a gate electrode, a gate insulating layer, a channel layer, a barrier layer, as well as a source electrode and a drain electrode on a substrate; the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. By depositing a channel layer in a first mixed gas containing H2, Ar and O2, the hysteresis phenomenon of the TFT can be mitigated effectively to improve the display quality of the display panel. |
| 申请公布号 |
US2015053967(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201314387390 |
申请日期 |
2013.07.02 |
| 申请人 |
BOE TECHNOLOGY GROUP CO., LTD. ;BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
Yan Changjiang;Li Tiansheng;Xu Shaoying;Xie Zhenyu;Chen Xu |
| 分类号 |
H01L21/02;H01L29/786;H01L27/12;H01L29/66 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A preparation method of an Oxide TFT, comprising forming a gate electrode, a gate insulating layer, a channel layer as well as a source electrode and a drain electrode on a substrate,
wherein the channel layer is formed by depositing an amorphous oxide semiconductor film in a first mixed gas containing H2, Ar and O2. |
| 地址 |
Beijing CN |
