| 摘要 |
Provided is a piezo-resonator in which the resonance frequency dispersion due to the thickness dispersion of Si is minimized. This piezo-resonator (1) is provided with: single-crystal Si (5); a piezo-electric thin film (8) which consists of aluminum nitride and which is provided over the single-crystal Si (5); and first and second electrodes (6, 7) provided in such a state that the piezo-electric thin film (8) is sandwiched between both. The piezo-electric thin film (8) consisting of aluminum nitride is doped with an element excluding nitrogen and aluminum, whereby the synthetic sound velocity in the constituent members excluding the single-crystal Si (5) is made substantially equal to the sound velocity in the single-crystal Si (5). |
