| 摘要 |
<p>Some embodiments of the present invention provide nonvolatile memory devices including a plurality of intergate insulating patterns and a plurality of cell gate patterns that are alternately and vertically stacked on a substrate, an active pattern disposed on the substrate, the active pattern extending upwardly along sidewalls of the intergate insulating patterns and the cell gate patterns, a plurality of charge storage patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, the plurality of the charge storage patterns being separated from each other, tunnel insulating patterns disposed between the plurality of cell gate patterns and the active pattern, respectively, and the tunnel insulating patterns extending to be directly connected to each other and a plurality of blocking insulating patterns disposed between the plurality of cell gate patterns and the plurality of charge storage patterns, respectively. A sidewall of the cell gate pattern may be recessed laterally so that an undercut region is defined and the charge storage pattern is disposed in the undercut region.</p> |
