PRECURSOR COMPOSITION FOR METAL OXIDE SEMICONDUCTOR LAYER FORMATION, METAL OXIDE SEMICONDUCTOR LAYER, MANUFACTURING METHOD THEREOF, FIELD-EFFECT TRANSISTOR, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a precursor composition which enables uniform coating even on a low-surface free energy face and which enables formation of a metal oxide semiconductor layer high in mobility and excellent in compactness.SOLUTION: A precursor composition for metal oxide semiconductor layer formation comprises at least one first amide selected from a group consisting of materials expressed by the formulas [1] to [4] below, a metal salt and a solvent. In the precursor composition, the ratio (the solvent: the first amide) of the first amide to the solvent is 94.1:5.9 or less on the basis of a volume ratio; 50 mass% or more of the solvent is at least one organic solvent selected from a group consisting of materials expressed by the formulas [5] to [6] below; and the content of the first amide is 8-100 mass% to the metal salt.