| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method of manufacturing a semiconductor devices includes providing a semiconductor substrate that includes a channel region. The method includes forming a gate electrode material film including a stepped portion on the channel region. A sacrificial material film that has an etch selectivity that is the same as an etch selectivity of the gate electrode material film is formed. The sacrificial material film is planarized until a top surface of the gate electrode material film is exposed. The stepped portion is reduced by removing an exposed portion of the gate electrode material film. |
| 申请公布号 |
US2015056795(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201414445284 |
申请日期 |
2014.07.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
Kang Bo-kyeong;Yoon Bo-un;Yoon Il-young;Choi Jae-kwang;Kim Ho-young;Park Se-jung;Kim Jae-seok |
| 分类号 |
H01L29/66;H01L21/321;H01L21/3213;H01L21/28 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate that comprises a channel region; forming a gate electrode material film comprising a stepped portion on the channel region; forming a sacrificial material film on the gate electrode material film, wherein the sacrificial material film has different etch selectivity with respect to the gate electrode material film; planarizing the sacrificial material film until a top surface of the gate electrode material film is exposed; and reducing the stepped portion of the gate electrode material film by removing an exposed portion of the gate electrode material film. |
| 地址 |
Gyeonggi-do KR |
