发明名称 PATTERN FORMATION METHOD, MASK FOR PATTERN FORMATION, METHOD FOR MANUFACTURING MASK, AND PATTERN FORMATION APPARATUS
摘要 According to one embodiment, a pattern formation method includes: preparing a mask pattern for interference, a photoelectric conversion unit, and a processing object, the mask pattern for interference being periodically arranged a plurality of light transmissive portions, the photoelectric conversion unit being disposed apart from the mask pattern for interference; applying light to the mask pattern for interference to produce Talbot interference based on transmitted light of the light transmitted through the light transmissive portions; applying interference light produced by the Talbot interference to the photoelectric conversion unit to cause the photoelectric conversion unit to emit electrons based on the interference light; and forming a pattern by applying the electrons to the processing object.
申请公布号 US2015053867(A1) 申请公布日期 2015.02.26
申请号 US201314095480 申请日期 2013.12.03
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 INANAMI Ryoichi;Ito Shinichi;Sato Takashi
分类号 H01J37/317;H01J37/22 主分类号 H01J37/317
代理机构 代理人
主权项 1. A pattern formation method comprising: preparing a mask pattern for interference, a photoelectric conversion unit, and a processing object, the mask pattern for interference being periodically arranged a plurality of light transmissive portions, the photoelectric conversion unit being disposed apart from the mask pattern for interference; applying light to the mask pattern for interference to produce Talbot interference based on transmitted light of the light transmitted through the light transmissive portions; applying interference light produced by the Talbot interference to the photoelectric conversion unit to cause the photoelectric conversion unit to emit electrons based on the interference light; and forming a pattern by applying the electrons to the processing object.
地址 Tokyo JP