发明名称 Methods for Selectively Modifying RF Current Paths in a Plasma Processing System
摘要 Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.
申请公布号 US2015053644(A1) 申请公布日期 2015.02.26
申请号 US201414531984 申请日期 2014.11.03
申请人 Lam Research Corporation 发明人 Nam Sang Ki;Dhindsa Rajinder;Marakhtanov Alexei
分类号 H01J37/32 主分类号 H01J37/32
代理机构 代理人
主权项 1. A method for compensating for azimuthal non-uniformity in a plasma processing system having a plasma processing chamber, comprising: measuring, using at least one sensor associated with said chamber, indicia of said azimuthal non-uniformity; and adjusting, responsive to said measuring, by selectively connecting a first RF path modifier of a plurality of RF path modifiers to a conductive portion of a lower electrode, whereby at least a second RF path modifier of said plurality of RF path modifiers is not connected to said conductive portion of said lower electrode after said adjusting and wherein said plurality of RF path modifiers are disposed in an insulator portion that is disposed in an RF current path between an RF current source and said conductive portion.
地址 Fremont CA US