发明名称 |
Photoresist and Method of Formation and Use |
摘要 |
A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds. |
申请公布号 |
US2015056555(A1) |
申请公布日期 |
2015.02.26 |
申请号 |
US201313973512 |
申请日期 |
2013.08.22 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lin Keng-Chu;Liou Joung-Wei;Wu Cheng-Han;Chang Ya Hui |
分类号 |
H01L21/02;G03F7/038;G03F7/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
supplying a first precursor to a deposition chamber, the first precursor comprising at least one carbon-carbon double bond; and reacting the first precursor with a second precursor in a deposition chamber, wherein the reacting the first precursor with the second precursor deposits a photoresist onto a substrate, the photoresist comprising a carbon backbone with at least one carbon-carbon double bond. |
地址 |
Hsin-Chu TW |