发明名称 Photoresist and Method of Formation and Use
摘要 A system and method for depositing a photoresist and utilizing the photoresist are provided. In an embodiment a deposition chamber is utilized along with a first precursor material comprising carbon-carbon double bonds and a second precursor material comprising repeating units to deposit the photoresist onto a substrate. The first precursor material is turned into a plasma in a remote plasma chamber prior to being introduced into the deposition chamber. The resulting photoresist comprises a carbon backbone with carbon-carbon double bonds.
申请公布号 US2015056555(A1) 申请公布日期 2015.02.26
申请号 US201313973512 申请日期 2013.08.22
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lin Keng-Chu;Liou Joung-Wei;Wu Cheng-Han;Chang Ya Hui
分类号 H01L21/02;G03F7/038;G03F7/20 主分类号 H01L21/02
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: supplying a first precursor to a deposition chamber, the first precursor comprising at least one carbon-carbon double bond; and reacting the first precursor with a second precursor in a deposition chamber, wherein the reacting the first precursor with the second precursor deposits a photoresist onto a substrate, the photoresist comprising a carbon backbone with at least one carbon-carbon double bond.
地址 Hsin-Chu TW