Capacitor and Semiconductor Device

摘要

A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

主权项

1. A capacitor comprising:
a film containing indium and a metal element selected from aluminum, gallium, yttrium, zirconium, lanthanum, cerium, and neodymium; a metal oxide film over the film; and a light-transmitting conductive film over the metal oxide film.