| 主权项 |
1. A process for producing a semiconductor laminate comprising a first metal oxide layer, a second metal oxide layer and a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer,
the process comprising: forming a first metal oxide layer comprising at least one metal oxide selected from the group consisting of indium oxide, gallium oxide, zinc oxide, and tin oxide from a first liquid phase, wherein the first metal oxide layer has a layer thickness of ≦20 nm, the first liquid phase comprises a metal oxide or a metal oxide precursor, and the metal oxide is selected from the group consisting of indium oxide, gallium oxide, zinc oxide, and tin oxide; and forming a second metal oxide layer comprising at least one metal oxide selected from the group consisting of gallium oxide, zinc oxide, tin oxide, hafnium oxide, silicon oxide, aluminium oxide, titanium oxide, alkali metal oxides, and alkaline earth metal oxides from a second liquid phase, wherein the second liquid phase comprises a metal oxide or a metal oxide precursor, and the metal oxide is selected from the group consisting of gallium oxide, zinc oxide, tin oxide, hafnium oxide, silicon oxide, aluminium oxide, titanium oxide, alkali metal oxides, and alkaline earth metal oxides, wherein the metal oxide of the first layer and the metal oxide of the second layer are different. |
