ATOMIC LAYER DEPOSITION OF SELECTED MOLECULAR CLUSTERS

摘要

Energy bands of a thin film containing molecular clusters are tuned by controlling the size and the charge of the clusters during thin film deposition. Using atomic layer deposition, an ionic cluster film is formed in the gate region of a nanometer-scale transistor to adjust the threshold voltage, and a neutral cluster film is formed in the source and drain regions to adjust contact resistance. A work function semiconductor material such as a silver bromide or a lanthanum oxide is deposited so as to include clusters of different sizes such as dimers, trimers, and tetramers, formed from isolated monomers. A type of Atomic Layer Deposition system is used to deposit on semiconductor wafers molecular clusters to form thin film junctions having selected energy gaps. A beam of ions contains different ionic clusters which are then selected for deposition by passing the beam through a filter in which different apertures select clusters based on size and orientation.

主权项

1. A transistor formed on a substrate, the transistor comprising:
a source region; a drain region; a gate that controls current flow between the source and drain regions; contacts that couple the source region, drain region, and gate to a multi-layer metal interconnect structure; and a molecular cluster thin film having nanoscale molecular clusters therein, said molecular clusters having a selected atomic structure that determines an electrical characteristic of the transistor.