SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A semiconductor light emitting device is provided which has improved light emission efficiency. The semiconductor light emitting device includes an active layer having a quantum well structure. The quantum well structure includes well and barrier layers that are alternately and repeatedly deposited on one another. The well layer is formed of a gallium nitride group semiconductor that contains In. The well layer has a profile of composition ratio of In that includes a first portion, and a second portion that is in contact with the first portion. The concentration of In in the first portion is substantially fixed or reduced along the thickness direction of the well layer from the negative side to the positive side of the piezoelectric field that is produced in the well layer. The concentration of In in the second portion is sharply reduced with respect to the first portion.

主权项

1. A semiconductor light emitting device comprising an active layer that includes well and barrier layers,
wherein said well layer is formed of a gallium nitride group semiconductor that contains In, wherein the well layer has a profile of composition ratio of In that includes a first portion, and a second portion that is in contact with said first portion, wherein the concentration of In in said first portion is substantially fixed or reduced, and the concentration of In in said second portion is sharply reduced with respect to said first portion along the thickness direction of said well layer from the negative side to the positive side of the piezoelectric field that is produced in said well layer.