| 摘要 |
A method for operating a nonvolatile memory device with improved performance according to the embodiment of the present invention includes the steps of: receiving a read command from a memory controller; determining a read mode based on the received read command; controlling the offset and charging time of a precharge control signal according to the determination result; and precharging a sensed bit line among a plurality of bit lines with a precharge voltage based on the controlled precharge control signal. The sensed bit line is a bit line to be precharged according to the determined read mode among the bit lines. |
