摘要 |
<p>A plasma reactor of the present invention is a plasma reactor which is provided between a process chamber, in which thin film forming in a vacuum environment or dry etching is carried out, and which is provided in a vacuum pump or between the vacuum pump and a scrubber so as to decompose unreacted gas, purging gas or exhaust gas including partial initial reactants, and the plasma reactor comprises: a dielectric tube through which the unreacted gas, the purging gas or the exhaust gas including partial initial reactants pass through; electrodes which are provided to come into close contact with the outer surface of the dielectric tube so as to form plasma; and a magnetic field generating means for enclosing the outside of the dielectric tube.</p> |
申请人 |
CLEAN FACTORS.,LTD.;NOH, MYUNGKEUN;MOON, KYUNGSUN |
发明人 |
NOH, MYUNGKEUN;MOON, KYUNGSUN;KO, GYOUNG O |