SUPER JUNCTION SEMICONDUCTOR DEVICE

摘要

An SJ-MOSFET (200) includes an active region (1) serving as a main current path and a temperature detection region (4) including a temperature detecting diode (3). Main SJ cells (13) in which n drift regions (13b) and p partition regions (13a) are alternately adjacent to each other are arranged in a drift layer (12) in the active region (1). The temperature detection region (4) is provided in the active region (1). Fine SJ cells (131) in which n drift regions (131b) and p partition regions (131a) are alternately bonded to each other at a pitch less than that of the n drift region (13b) and the p partition region (13a) of the main SJ cell (13) are arranged in the drift layer (12) in the temperature detection region (4). The temperature detecting diode (3) is formed above the fine SJ cells (131) with an insulating film (5) interposed therebetween. The temperature detecting diode (3) includes a p + anode region and an n + cathode region which come into contact with each other to form a pn junction.