发明名称 |
HIGH-PURITY COPPER-MANGANESE-ALLOY SPUTTERING TARGET |
摘要 |
<p>Provided is a high-purity copper-manganese-alloy sputtering target comprising 0.05 to 20 wt% of Mn and the remainder being Cu and inevitable impurities. The high-purity copper-manganese-alloy sputtering target is characterized in that the in-plane variation (CV value) in Mn concentration of the target is 3% or less. It is thus possible to form a thin film having excellent uniformity by adding an appropriate amount of a Mn element to copper and reducing the in-plane variation of the sputtering target. In particular, there is provided a high-purity copper-manganese-alloy sputtering target which is useful for improving the yield and the reliability of semiconductor products which are making progress in a degree of refinement and integration.</p> |
申请公布号 |
EP2698447(A4) |
申请公布日期 |
2015.02.25 |
申请号 |
EP20120832094 |
申请日期 |
2012.09.06 |
申请人 |
JX NIPPON MINING & METALS CORP. |
发明人 |
NAGATA KENICHI;OTSUKI TOMIO;OKABE TAKEO;MAKINO NOBUHITO;FUKUSHIMA ATSUSHI |
分类号 |
C23C14/34;C22C9/05;C22F1/00;C22F1/08 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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