| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME |
| 摘要 |
<p>A substrate has a surface (SR) made of a semiconductor having a hexagonal single-crystal structure of polytype 4H. The surface (SR) of the substrate is constructed by alternately providing a first plane (S1) having a plane orientation of (0-33-8), and a second plane (S2) connected to the first plane (S1) and having a plane orientation different from the plane orientation of the first plane (S1). A gate insulating film is provided on the surface (SR) of the substrate. A gate electrode is provided on the gate insulating film.</p> |
| 申请公布号 |
EP2725619(A4) |
申请公布日期 |
2015.02.25 |
| 申请号 |
EP20120805036 |
申请日期 |
2012.05.25 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
MASUDA, TAKEYOSHI;HARADA, SHIN;WADA, KEIJI;HIYOSHI, TORU |
| 分类号 |
H01L29/12;H01L21/20;H01L21/205;H01L21/336;H01L29/16;H01L29/78 |
主分类号 |
H01L29/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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