摘要 |
<p>Disclosed are a thin film transistor with reliability and a manufacturing method thereof. The channel of the thin film transistor includes zinc and nitrogen or zinc, nitrogen, and oxygen. A crystalline phase is included in the channel. The channel includes zinc nitride or zinc oxynitride and is expressed by a chemical formula of ZnOxNy(x>=0, y>0), x+y=1, y=0.4 - 1.0).</p> |