发明名称 Compound semiconductor, method of manufacturing compound semiconductor and transistor including compound semiconductor
摘要 <p>Disclosed are a thin film transistor with reliability and a manufacturing method thereof. The channel of the thin film transistor includes zinc and nitrogen or zinc, nitrogen, and oxygen. A crystalline phase is included in the channel. The channel includes zinc nitride or zinc oxynitride and is expressed by a chemical formula of ZnOxNy(x>=0, y>0), x+y=1, y=0.4 - 1.0).</p>
申请公布号 KR20150019355(A) 申请公布日期 2015.02.25
申请号 KR20130096113 申请日期 2013.08.13
申请人 发明人
分类号 H01L21/336;H01L29/786 主分类号 H01L21/336
代理机构 代理人
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