发明名称 COMPOSITION FOR FORMATION OF RESIST UNDERLAYER FILM CONTAINING SILICON HAVING NITROGEN-CONTAINING RING
摘要 There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography, comprising as a silane compound, a hydrolyzable organosilane, a hydrolysis product thereof, or a hydrolysis-condensation product thereof, wherein the hydrolyzable organosilane is a hydrolyzable organosilane of Formula (1): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒR 1 a R 2 b Si(R 3 ) 4-(a+b) €ƒ€ƒ€ƒ€ƒ€ƒFormula (1) wherein R 1 is Formula (2): in which R 4 is an organic group, and R 5 is a C 1-10 alkylene group, a hydroxyalkylene group, a sulfide bond, an ether bond, an ester bond, or a combination thereof, X 1 is Formula (3), Formula (4), or Formula (5): R 2 is an organic group, and R 3 is a hydrolysable group.
申请公布号 EP2538276(A4) 申请公布日期 2015.02.25
申请号 EP20110744756 申请日期 2011.02.18
申请人 NISSAN CHEMICAL INDUSTRIES, LTD. 发明人 NAKAJIMA, MAKOTO;KANNO, YUTA;SHIBAYAMA, WATARU
分类号 G03F7/11;C07F7/18;C08G77/26;G03F7/40;H01L21/027 主分类号 G03F7/11
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