| 摘要 |
The purpose of the present invention according to embodiments of the present invention is to provide an electronic device and a manufacturing method thereof, capable of securing an etch margin when a variable resistor is formed and reducing a process difficulty. The electronic device according to one embodiment of the present invention to achieve the purpose includes a semiconductor memory. The semiconductor memory includes the variable resistor which includes a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer; a contact plug which is in contact with the upper side of the variable resistor and includes a magnetic correction layer; and a conductive line which is connected to the variable resistor through the contact plug including the magnetic correction layer. By the electronic device and the manufacturing method thereof according to the described embodiments of the present invention, an etch margin is secured in a patterning process by reducing the total thickness of the variable resistor by applying a top electrode contact which includes the magnetic correction layer and is in contact with the variable resistor. Also, a process difficulty is reduced by using a horizontal magnetic material when the magnetic correction layer is formed. |
