| 摘要 |
<p>A method for manufacturing a magnetic memory device is provided. A first magnetic layer, a tunnel barrier and a second magnetic layer are sequentially deposited on a substrate, and magnetic tunnel bonding structures are formed by etching the second magnetic layer, the tunnel barrier and the first magnetic layer. An ion beam etching process is performed by using reactive source gas containing oxygen to oxidize the side walls of the magnetic tunnel bonding structures while removing etching residues on the side walls.</p> |
