| 摘要 |
Reducing the bow in a composite wafer comprising a silicon wafer and a silicon carbide layer grown on the silicon wafer, by applying nitrogen atoms during the growth process of the silicon carbide layer to generate a compressive stress within the composite wafer. The compressive stress reduces the natural tensile stress in the system and thus reduces the bowing of the wafer. The nitrogen atoms may be applied substantially across the entire wafer. The nitrogen atoms may not form part of the doping concentration of the silicon carbide layer. The nitrogen atoms may be applied during the silicon carbide growth phase. The silicon carbide layer may be a 3-step cubic silicon carbide (3C-SiC). The layers may be used to make a semiconductor device such as diode, or a transistor. |
