| 摘要 |
<p>The present invention relates to a system for monitoring in real time the operating state of an IGBT device, in particular for determining a junction temperature and/or a remaining lifetime of an IGBT device, comprising:
- a differential unit for receiving a gate-emitter voltage characteristic of the IGBT device to be measured and for differentiating the gate-emitter voltage characteristic to obtain pulses correlating with edges formed by a Miller plateau phase during a switch-off phase of the IGBT device;
- a timer unit for measuring the time delay between the obtained pulses indicating the start and end of the Miller plateau phase during the switch-off phase of the IGBT device;
- a junction temperature calculation unit for determining the junction temperature and/or the remaining lifetime of the IGBT device based on the measured time delay.</p> |
