| 摘要 |
<p>Provided is a method for depositing a zinc oxide-based thin film including: a step of mixing at least two first organic solvents with a zinc oxide precursor; a step of evaporating the mixed solution of the first organic solvents and the zinc oxide precursor; and a step of depositing a zinc oxide-based thin film on the substrate by supplying an oxidizing agent and air obtained by evaporating the mixed solution of the first organic solvents and the zinc oxide precursor to a deposition chamber in which a substrate is installed. Preferably, the method for depositing the zinc oxide-based thin film, wherein the zinc oxide-based thin film is coated with gallium, includes: a step of mixing at least two second organic solvents with a gallium precursor; a step of evaporating the mixed solution of the second organic solvents and the gallium precursor; and a step of depositing a zinc oxide-based thin film coated with gallium on the substrate by supplying the air obtained by evaporating the mixed solution of the second organic solvents of the gallium precursor to the deposition chamber.</p> |
