| 摘要 |
A plasma processing method includes: etching an anti reflection coating film with plasma generated from an etching gas by using a resist film that is patterned as a mask, in a deposited film in which an Si-ARC film constituting the anti reflection coating film is formed on a layer to be etched and the ArF resist film is formed on the anti reflection coating film; and modifying the ArF resist film with plasma generated from a modifying gas including a CF4 gas, a COS gas and an Ar gas by introducing the modifying gas into a plasma processing apparatus, wherein the modifying is performed before the etching. |
