| 摘要 |
<p>Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohols and diols or other types of surfactants described herein, such as without limitation , 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyne-4,7-diol, 4-ethyl-1-octyn-3-ol, 2,5-dimethylhexan-2,5-diol, 2,4,7,9-tetramethyl-5-dodecyne-4,7-diol, 2,5,8,11-tetramethyl-6-dodecyne-5,8-diol, 2,6-dimethyl-4-heptanol, N,N'-bis(1,3-dimethylbutyl)ethylenediamine, diisopentyl tartrate, 2,4,7,9-tetramethyl-4,7-decanediol and combinations thereof.</p> |
