| 摘要 |
<p>There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.</p> |
