| 摘要 |
<p>Provided is a plasma processing apparatus employing a method of applying a DC voltage to a first electrode without installing a facing electrode. A plasma etching apparatus includes an evacuable chamber 10 configured to accommodate a semiconductor wafer W; an upper electrode 34 and a lower electrode 16, on which the semiconductor wafer W is mounted, arranged to face each other within the chamber 10; a processing gas supply unit 66 configured to supply a processing gas into the chamber 10; a first high frequency power supply 48 and a second high frequency power supply 90 configured to apply a high frequency power for plasma generation and a high frequency power for bias application to the lower electrode 16, respectively; and a DC voltage application unit 50 configured to apply a DC voltage alternately changed from positive voltage to negative voltage to the upper electrode 34.</p> |
