发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
The present invention provides a semiconductor light-emitting device capable of effectively emitting ultraviolet light and a method of manufacturing the same. A semiconductor light-emitting device 1 includes: a p-type semiconductor layer 14; a semiconductor layer that has an emission wavelength in at least an ultraviolet range; and a transparent electrode 15 that is formed on the p-type semiconductor layer 14. The transparent electrode 15 includes a crystallized IZO film. |
申请公布号 |
EP2012371(B1) |
申请公布日期 |
2015.02.25 |
申请号 |
EP20070741629 |
申请日期 |
2007.04.13 |
申请人 |
TOYODA GOSEI CO., LTD. |
发明人 |
FUKUNAGA, NAOKI;OSAWA, HIROSHI |
分类号 |
H01L33/00;H01L33/32;H01L33/42;H01L33/56;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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