| 摘要 |
<p>The present invention is to provide a memory and a memory system including the same, which are capable of preventing damage to data which are stored in memory cells connected to word lines by refreshing the word lines adjacent to a highly active word line. A memory includes: a first cell block including a plurality of first word line groups including two or more first word lines, and one or more first redundancy word line groups including two or more first redundancy word lines, wherein each of the one or more first redundancy word line groups corresponds to one among a plurality of hit signals; a second cell block including a plurality of second word line groups including two or more second word lines, and one or more second redundancy word line groups including two or more second redundancy word lines, wherein each of the one or more second redundancy word line groups corresponds to one among the hit signals; and a control unit configured to select a cell block corresponding to a first input address, which is first inputted in a target refresh section, in the target refresh section, and to refresh a word line selected by using an input address inputted after the first input address, wherein one or more adjacent word lines adjacent to the selected word line are refreshed by using the first input address and the hit signals when the selected word line is adjacent to a redundancy word line.</p> |
