| 摘要 |
The present invention is to provide a method for manufacturing a semiconductor device to manufacture a semiconductor device which has superior thermal stability and tolerance to moisture by reducing complex processes and warpage without controlling the amount of resin charged according to the number of error devices in forming a sealing layer and coping with the warpage due to an existing filling material. Provided is a method for manufacturing a semiconductor device which includes a resin mounting process which mounts a large amount of a thermosetting resin than needed to form a sealing layer, on a substrate having no semiconductor device, an arrangement process which heats a first cavity at room temperature to 200°C, arranges a substrate having a semiconductor device, in one of an upper mold of a lower mold, and arranges the substrate having no semiconductor device in the other, a resin discharge process which pressurizes the upper mold and the lower mold and discharges a residual thermosetting resin to the outside of the first cavity, and an integration process which pressurizes the first upper mold and the lower mold, molds the thermosetting resin, and integrates the substrate having a semiconductor device, the substrate having no semiconductor device, and the sealing layer. |
