| 摘要 |
<p>A resist pattern forming method according to the present invention comprises: a process (1) in which a resist film formed on a support member by using a resist composition is exposed and patterned by development to form a pre-pattern; and a process (2) in which one or both of an ultraviolet ray and a visible light is emitted to cure the pre-pattern, wherein the process (2) includes a manipulation for irradiating the pre-pattern using a beam formed by cutting a wavelength lower than 300 nm from the ultraviolet ray and the visible ray. According to the resist pattern forming method of the present invention, a resist pattern, which has high resistance against heat and dry etching and can be easily peeled off from the support member, can be formed.</p> |
