| 摘要 |
<p>An intermediate layer including at least one of elements constituting a phase change material and silicon is arranged between a recording layer composed of the phase change material and an n+ polysilicon film to reduce contact resistance between the recording layer and the n+ polysilicon film, thereby simplifying the structure of a phase change memory and reducing the cost thereof. If the phase change material contains Ge, Sb, and Te, for example, the intermediate layer includes at least one of Si-Sb, Si-Te, and Si-Ge.</p> |
