High electron mobility transistor, method of manufacturing the same and electronic device including high electron mobility transistor

摘要

Disclosed are a high electron mobility transistor (HEMT), a manufacturing method thereof, and an electronic device including the same. The disclosed HEMT includes an impurity containing layer whose part is selectively activated. The activation region of the impurity containing layer is used as a depletion forming region. An inactivation region exists on both sides of the activation region of the impurity containing layer. The hydrogen content of the activation region is lower than the hydrogen content of the inactivation region. According to the other aspect of the present invention, the HEMT includes a depletion forming element. The depletion forming element includes a plurality of regions whose properties (for example, doping density) are changed in a horizontal direction.