| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of patterning a semiconductor film in manufacturing of a transistor array which is used in a display device. <P>SOLUTION: A method of manufacturing a transistor includes a step for providing a substrate, a step for providing a gate electrode contiguous to the substrate, a step for providing a gate dielectric contiguous to the substrate and the gate electrode, a step for providing a source electrode and a drain electrode contiguous to the gate dielectric, a step for providing a mask contiguous to the gate dielectric in such a pattern as the source electrode, the drain electrode and a part of the gate dielectric remain exposed, and a step for providing a semiconductor layer containing an organic semiconductor and one of multiple inorganic colloidal particles contiguously to the source electrode, the drain electrode, a part of the gate dielectric, and the mask. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
