发明名称 表示装置
摘要 <p>In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.</p>
申请公布号 JP5674846(B2) 申请公布日期 2015.02.25
申请号 JP20130068859 申请日期 2013.03.28
申请人 发明人
分类号 H01L29/786;G02F1/1368;G09F9/30;H01L51/50;H05B33/14 主分类号 H01L29/786
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