| 摘要 |
<p>Disclosed is an image sensor which includes a source follower to reduce power consumption. A source follower transistor according to the exemplary embodiment of the present invention includes a first semiconductor layer and a second semiconductor layer which are located between a source and a drain, and a channel structure which includes a blocking structure. The first semiconductor layer is separated from a gate insulation layer of the source follower transistor with a first depth or more. A carrier moves from the source to the drain of the source follower transistor through the first semiconductor layer.</p> |
