| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of further reducing resistance of an electrode region than before, to provide a method of manufacturing the same, and to provide an integrated circuit. <P>SOLUTION: A nickel layer 17 is formed on a group III-V compound semiconductor layer 4, and by heating them using RTA treatment, a source region 5 and a drain region 6 composed of a nickel group III-V alloy (Ni-In<SB POS="POST">x</SB>Ga<SB POS="POST">1-x</SB>As<SB POS="POST">y</SB>P<SB POS="POST">1-y</SB>alloy) are formed. For this reason, in a MOSFET 1, the parasitic resistance of the source region 5 and the drain region 6 can be further reduced than the parasitic resistance of a conventional source region and a conventional drain region that are formed only by injecting an impurity into the group III-V compound semiconductor layer 4 using implantation. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
