HETEROJUNCTION UNIPOLAR DIODE WITH LOW TURN-ON VOLTAGE

摘要

A unipolar diode (100) with low turn-on voltage, is provided, comprising: a subcathode semiconductor layer (130); a low-doped, wide bandgap cathode semiconductor layer (120); and a high-doped, narrow bandgap anode semiconductor layer (110) comprising Indium Gallium Arsenide (InGaAs), wherein a junction between the cathode layer and the anode layer creates an electron barrier in the conduction band, with the barrier configured to produce a low turn-on voltage for the diode.