发明名称 Translation layer in a solid state storage device
摘要 Solid state storage devices and methods for flash translation layers are disclosed. In one such translation layer, a sector indication is translated to a memory location by a parallel unit look-up table is populated by memory device enumeration at initialization. Each table entry is comprised of communication channel, chip enable, logical unit, and plane for each operating memory device found. When the sector indication is received, a modulo function operates on entries of the look-up table in order to determine the memory location associated with the sector indication.
申请公布号 US8966165(B2) 申请公布日期 2015.02.24
申请号 US201414467322 申请日期 2014.08.25
申请人 Micron Technology, Inc. 发明人 Manning Troy
分类号 G06F12/00;G11C16/00;G06F12/02;G11C16/10 主分类号 G06F12/00
代理机构 Dicke, Billig & Czaja, PLLC 代理人 Dicke, Billig & Czaja, PLLC
主权项 1. A method of operating solid state device, the method comprising: enumerating memory devices of the solid state device and a location of each enumerated memory device; determining a target memory device of the enumerated memory devices in response to a sector identifier and the enumerated memory device locations; and generating a data block look-up table comprising a group of logical block addresses in the target memory device, each logical block address associated with a different data block look-up table entry, each data block look-up table entry comprising a first portion configured to indicate a highest programmed page of a memory block indicated by the associated logical block address and a second portion that is different from the first portion and that is configured to indicate that the memory block is ordered when the memory block is ordered and to indicate that the memory block is not ordered when the memory block is not ordered.
地址 Boise ID US
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