Body contacted hybrid surface semiconductor-on-insulator devices

摘要

A portion of a top semiconductor layer of a semiconductor-on-insulator (SOI) substrate is patterned into a semiconductor fin having substantially vertical sidewalls. A portion of a body region of the semiconductor fin is exposed on a top surface of the semiconductor fin between two source regions having a doping of a conductivity type opposite to the body region of the semiconductor fin. A metal semiconductor alloy portion is formed directly on the two source regions and the top surface of the exposed body region between the two source regions. The doping concentration of the exposed top portion of the body region may be increased by ion implantation to provide a low-resistance contact to the body region, or a recombination region having a high-density of crystalline defects may be formed. A hybrid surface semiconductor-on-insulator (HSSOI) metal-oxide-semiconductor-field-effect-transistor (MOSFET) thus formed has a body region that is electrically tied to the source region.

主权项

1. A method of forming a semiconductor structure comprising:
forming a semiconductor fin having a first sidewall, a second sidewall, a first end wall, a second end wall, a substantially horizontal top surface, and a substantially horizontal bottom surface contacting a top surface of an insulator layer and having a doping of a first conductivity type, wherein said first and second sidewalls are substantially parallel to each other and substantially vertical, said first end wall is adjoined to one end of each of said first sidewall and said second sidewall, and said second end wall is adjoined to the other end of said first sidewall and said second sidewall and is substantially parallel to said first end wall; forming a first source region having a doping of a second conductivity type directly beneath a portion of said first sidewall, directly beneath a portion of said first end wall, and within a first end portion of said semiconductor fin, wherein said second conductivity type is the opposite of said first conductivity type; forming a second source region having a doping of said second conductivity type directly beneath a portion of said second sidewall, directly beneath another portion of said first end wall, and within said first end of said semiconductor fin, said second source region being laterally spaced from, and not contacting, said first source region; forming a drain region directly beneath an entirety of said second end wall and within a second end of said semiconductor fin, said drain region having a doping of said second conductivity type, wherein said drain region does not contact said first and second source regions, and wherein said second end is located at an opposite side of said first end; and forming a metal semiconductor alloy portion directly on said first source region, said second source region, and a top surface of a portion of said semiconductor fin having a doping of said first conductivity type and located between said first source region and said second source region.