Photodiode and method for making the same

摘要

A method for manufacturing a photodiode including the steps of providing a substrate, solution depositing a quantum nanomaterial layer onto the substrate, the quantum nanomaterial layer including a number of quantum nanomaterials having a ligand coating, and applying a thin-film oxide layer over the quantum nanomaterial layer.

主权项

1. A method for manufacturing a photodiode comprising steps of:
providing a substrate comprising germanium; doping said substrate; subjecting said substrate to sulfur passivation; cleaning said substrate after said sulfur passivation; solution depositing a quantum nanomaterial layer onto said substrate, said quantum nanomaterial layer comprising a plurality of quantum nanomaterials, each quantum nanomaterial of said plurality comprising:
a core comprising at least one of tin-telluride and lead-tin-telluride which is tuned to absorb radiation within a bandwidth of mid-wavelength infrared and long-wavelength infrared; anda ligand coating on said core comprising a metal chalcogenide complex comprising at least one of tin-sulfide, tin-selenide and tin-telluride, wherein said ligand coating is applied to said core using a ligand exchange reaction to substitute an original coating on said core; and applying a thin-film oxide layer over said quantum nanomaterial layer.