Semiconductor device and method of manufacturing the same

摘要

A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a lower electrode film above a semiconductor substrate; forming a dielectric film made of a ferroelectric material on the lower electrode film by a sputtering method; subjecting the dielectric film to a crystallization treatment; and forming a conductive oxide film on the dielectric film, the conductive oxide film being made of a ferroelectric material to which conductivity is provided by adding a conductive material, wherein the ferroelectric material forming the conductive oxide film is PZT, the conductive material is at least one of iridium and ruthenium, and a percentage content of the conductive material in the ferroelectric material forming the conductive oxide film is not less than 1 mol % and not more than 4 mol %, and the forming the lower electrode film includes:
forming a noble metal film made of a noble metal above the semiconductor substrate; andforming an amorphous noble metal oxide film, made of an oxide of a noble metal that is the same as the noble metal forming the noble metal film, on the noble metal film, a film thickness of the noble metal oxide film being equal to or more than 0.1 nm and equal to or less than 3 nm.