Lattice matched crystalline substrates for cubic nitride semiconductor growth

摘要

Disclosed embodiments include methods of fabricating a semiconductor layer or device and devices fabricated thereby. The methods include, but are not limited to, providing a substrate having a cubic crystalline surface with a known lattice parameter and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate by coincident site lattice matched epitaxy. The cubic crystalline group III-nitride alloy may be prepared to have a lattice parameter (a′) that is related to the lattice parameter of the substrate (a). The group III-nitride alloy may be a cubic crystalline InxGayAl1-x-yN alloy. The lattice parameter of the InxGayAl1-x-yN or other group III-nitride alloy may be related to the substrate lattice parameter by (a′)=√2(a) or (a′)=(a)/√2. The semiconductor alloy may be prepared to have a selected band gap.

主权项

1. A method of fabricating a semiconductor layer comprising:
providing a substrate having a cubic crystalline surface with a known lattice parameter (a); and growing a cubic crystalline group III-nitride alloy layer on the cubic crystalline substrate surface by coincident site lattice matched epitaxy, wherein the cubic crystalline group III-nitride alloy is prepared to have a lattice parameter (a′) that is related to the lattice parameter (a) wherein (a′) is not equal to (a).