| 摘要 |
The present invention relates a semiconductor device and a manufacturing method thereof. The present invention relates to a semiconductor device capable of increasing a breakdown voltage without a separated epitaxial layer or buried layer in a high voltage horizontal MOSFET device. More particularly, the present invention relates to a semiconductor device capable of forming the potential of a first conductive body with high density to be different from the potential of a first conductive substrate by isolating the first conductive body with high density from the first conductive substrate. |
