Trench power device and semiconductor structure thereof

摘要

A semiconductor structure of a trench power device comprises a base, an insulating layer, and a source conductive layer. The base includes a first trench etched from the top surface thereof, and two portions of the top surface arranged at two opposite sides of the first trench are respectively defined as two top contacting surfaces. Part of the first trench is filled with the insulating layer, and two inner walls of a non-filled portion of the first trench are respectively defined as two side contacting surfaces without contacting the insulating layer. The source conductive layer is embedded in the insulating layer. Thus, when a metallic layer is integrally formed on the semiconductor structure and connects the top contacting surfaces and the side contacting surfaces, the top contacting surfaces and the side contacting surfaces are configured to be a Schottky barrier interface.

主权项

1. A trench power device, comprising:
a semiconductor structure defines a shielding gate area and a trench MOS barrier Schottky (TMBS) area adjacent to the shielding gate area, and the semiconductor structure comprising:
a base having a top surface, wherein the base includes a first trench arranged at the TMBS area and etched from the top surface of the base, two portions of the top surface arranged at two opposite sides of the first trench and in the TMBS area are respectively defined as two top contacting surfaces;an insulating layer, wherein part of the first trench is filled with the insulating layer, two inner walls of a portion of the first trench, not filled with insulating layer, are respectively defined as two side contacting surfaces without contacting the insulating layer;a source conductive layer embedded in the insulating layer; and a metallic layer integrally formed on the shielding gate area and the TMBS area, wherein the metallic layer connects the top contacting surfaces and the side contacting surfaces for causing the top contacting surfaces and the side contacting surfaces to be a Schottky barrier interface.