发明名称 |
Self-alignment for using two or more layers and methods of forming same |
摘要 |
Embodiments of the present disclosure include self-alignment of two or more layers and methods of forming the same. An embodiment is a method for forming a semiconductor device including forming at least two gates over a substrate, forming at least two alignment structures over the at least two gates, forming spacers on the at least two alignment structures, and forming a first opening between a pair of the at least two alignment structures, the first opening extending a first distance from a top surface of the substrate. The method further includes filling the first opening with a first conductive material, forming a second opening between the spacers of at least one of the at least two alignment structures, the second opening extending a second distance from the top surface of the substrate, and filling the second opening with a second conductive material. |
申请公布号 |
US8962464(B1) |
申请公布日期 |
2015.02.24 |
申请号 |
US201314030601 |
申请日期 |
2013.09.18 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chang Shih-Ming;Liu Ru-Gun;Hsieh Ken-Hsien;Shieh Ming-Feng;Lai Chih-Ming;Gau Tsai-Sheng |
分类号 |
H01L21/3205;H01L21/768;H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A method for forming a semiconductor device, the method comprising:
forming at least two gates over a substrate; forming at least two alignment structures over the at least two gates; forming spacers on opposite sidewalls of the at least two alignment structures; forming a first opening between a pair of the at least two alignment structures, a portion of the first opening exposing a top surface of at least one of the pair, the first opening extending a first distance from a top surface of the substrate; filling the first opening with a first conductive material to form a first conductive feature; forming a second opening between the spacers of at least one of the at least two alignment structures, the second opening extending a second distance from the top surface of the substrate, the second distance being different than the first distance; and filling the second opening with a second conductive material to form a second conductive feature. |
地址 |
Hsin-Chu TW |