| 发明名称 | Magnetoresistive element and writing method of magnetic memory | ||
| 摘要 | According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, a non-magnetic layer formed between the first magnetic layer and the second magnetic layer, a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer, a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer, and a second insulating layer formed on the second surface of the charge storage layer. | ||
| 申请公布号 | US8964459(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201313781739 | 申请日期 | 2013.02.28 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Nakai Tsukasa;Izumida Takashi;Ozeki Jyunichi;Kondo Masaki;Enda Toshiyuki;Aoki Nobutoshi |
| 分类号 | G11C19/08;G11C11/16 | 主分类号 | G11C19/08 |
| 代理机构 | Holtz, Holtz, Goodman & Chick PC | 代理人 | Holtz, Holtz, Goodman & Chick PC |
| 主权项 | 1. A magnetoresistive element, comprising: a first magnetic layer; a second magnetic layer; a non-magnetic layer formed between the first magnetic layer and the second magnetic layer; a charge storage layer having a first surface and a second surface different from the first surface, the first surface facing the second magnetic layer; a first insulating layer formed between the second magnetic layer and the first surface of the charge storage layer; and a second insulating layer formed on the second surface of the charge storage layer. | ||
| 地址 | Tokyo JP | ||